一种新型的单电子数值比较器

基于单电子晶体管的I-V特性,在构建反相器的基础上,推出了或非门及与或非逻辑门,并最终实现了一种新型的2位单电子数值比较器,利用SPICE模拟器验证了电路设计的正确性.该比较器结合了单电子晶体管与MOS管的优点.分析结果表明:与仅由单电子晶体管实现的比较器相比,电路的驱动能力提高的同时减少至少12个晶体管;与具有相同逻辑结构的CMOS实现的电路相比,该新型比较器使用了简单的单电子器件,使得电路的结构尺寸得到了极大的缩小,电路的功耗仅在10-10W数量级上,为将来超大规模集成电路进一步微型化奠定了基础.

A novel numerical comparator based on single electron devices

Based on the I-V characteristics of single-electron transistor, a close analysis was conducted by the proposed inverter based on single electron devices. On the basis of this inverter NOR and AND-OR-INVERT logic gates were presented, thus achieving the circuit of two-bit numerical comparator. The accuracy of the circuit was verified by SPICE. The single electron circuit shared the merits with both SET circuit and MOS circuit. Compared with the pure SET circuits, this one considerably augmented in its voltage gain and drive capability, and the number of electronic devices in circuit was decreased at least 12 transistors. Compared with the CMOS circuit based on the same logic structure, this one used a simple single electron nano-device that greatly reduced the circuit size, and the power depletion only had 10~(-10) W magnitude. These advantages may establish the base for the more micromation of future VLSI.