Defects in molecular beam epitaxial GaAs grown at low temperatures |
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| Authors: | N Hozhabri S C Sharma R N Pathak K Alavt |
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| Institution: | (1) Department of Physics, The University of Texas at Arlington, 76019 Arlington, TX;(2) NSF Center for Advanced Electron Devices and Systems, Department of Electrical Engineering, The University of Texas at Arlington, 76019 Arlington, TX |
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| Abstract: | We have utilized a variable energy positron beam and infrared transmission spectroscopy to study defects in GaAs epilayers
grown at low temperatures (LT-GaAs) by molecular beam epitaxy. We have measured the Doppler broadening of the positron-electron
annihilation gamma ray spectra as a function of positron implantation energy. From these measurements, we have obtained results
for the depth profiles of Ga monovacancies in unannealed LT-GaAs and Ga monovacancies and arsenic cluster related defects
in annealed LT-GaAs. We have also studied the effects of the Si impurities in annealed LT-GaAs. The infrared transmission
measurements on unannealed LT-GaAs furnish a broad defect band, related to As antisites, centered at 0.370 eV below the conduction
band. |
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| Keywords: | Defects LT-GaAs molecular beam epitaxy (MBE) |
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