| Fabrication of Ge Nano-Dot Heterojunction Phototransistors for Improved Light Detection at 1.55μm |
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| 引用本文： | 时文华,毛容伟,赵雷,罗丽萍,王启明.Fabrication of Ge Nano-Dot Heterojunction Phototransistors for Improved Light Detection at 1.55μm[J].中国物理快报,2006,23(3):735-737. |
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| 作者姓名： | 时文华 毛容伟 赵雷 罗丽萍 王启明 |
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| 作者单位： | State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
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| 基金项目： | Supported by the National Basic Research Program of China under Grant No G2000036603, the National Natural Science Foundation of China under Grant Nos 60336010, 90104003, and 90401001, and the National High Technology Research and Development Programme of China under Grant No 2002AA312010. |
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| 摘 要： | Heterojunction phototransistors （HPTs） with several Ge/Si nano-dot layers as the absorption region are fabricated to obtain improved light detectivity at 1.55μm. The HPT detectors are of n-p-n type with ten layers of Ge（8ML ） /Si（45nm） incorporated in the base-collector junction and are grown by an ultrahigh-vacuum chemicalvapor-deposition system. The detectors are operated with normal incidence. Because of the good quality of the grown material and fabrication process, the dark current is only 0.71pA/μm^2 under 5 V bias and the breakdown voltage is over 20 V. Compared to the positive-intrinsic-negative （PIN） reference detector with the same absorption layer, the responsivity is improved over 17 times for normal incidence at 1.55μm.
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| 关 键 词： | 纳米点 光电晶体管 纳米层 吸收域 |
| 收稿时间： | 2005-09-23 |
| 修稿时间： | 2005-09-23 |
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