| 铜在甲胺介质铁氰化钾化学-机械抛光液中的电化学行为 |
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| 引用本文： | 何捍卫,胡岳华,黄可龙.铜在甲胺介质铁氰化钾化学-机械抛光液中的电化学行为[J].应用化学,2001,18(11):893-0. |
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| 作者姓名： | 何捍卫 胡岳华 黄可龙 |
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| 作者单位： | 中南大学 |
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| 基金项目： | 国家杰出青年科学基金资助(59925412);湖南省优秀中青年科技基金资助(98JZY2167) |
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| 摘 要： | 二甲氧基苯胺;铜在甲胺介质铁氰化钾化学-机械抛光液中的电化学行为
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| 关 键 词： | 二甲氧基苯胺 铜在甲胺介质铁氰化钾化学-机械抛光液中的电化学行为 |
| 文章编号： | 1000-0518(2001)11-0893-05 |
| 收稿时间： | 2009-06-29 |
| 修稿时间： | 2001年5月17日 |
Electrochemical Behavior of Copper in Methylamine Aqueous Solution Containing K3Fe(CN)6 during CMP |
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| HE Han Wei,HU Yue Hua,HUANG Ke Long.Electrochemical Behavior of Copper in Methylamine Aqueous Solution Containing K3Fe(CN)6 during CMP[J].Chinese Journal of Applied Chemistry,2001,18(11):893-0. |
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| Authors: | HE Han Wei HU Yue Hua HUANG Ke Long |
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| Abstract: | The influences of concentrations of medium and passivator on film surface of copper and polishing process have been studied by electrochemical messurements as functions of polishing pressures, disk rates, film thickness and tightness in chemical mechanical polishing(CMP) process. Electrochemical variables, such as E corrosion and I corrosion explaining CMP processes and polishing rates were investigated. The following conclusions were obtained: 1)The concentrations of medium and passivator played a key role in passive film thickness and tightness on the surface of copper; 2)The polishing pressures and rotative rates depended on film thickness and tightness; 3)The removing and regenerating rates of the film influenced the CMP process. |
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| Keywords: | copper chemical mechanical polishing electrochemical behavior |
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