Optimization of absorption in InAs/InxGa1-xSb superlattices for long-wavelength infrared detection |
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| Institution: | 1. School of Physical Science and Technology, Southwest University, Chongqing 400715, China;2. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China;3. State Key Lab of Millimeter Waves, Southeast University, Nanjing 210096, China |
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| Abstract: | The linear absorption coefficient of InAs/InxGa1-xSb superlattices is optimized based on an 8×8 envelope-function approximation (EFA) model. The effect of layer widths, indium content, buffer choice, substrate orientation, interface type, layer growth order, piezoelectricity, and layer width variations on the cutoff wavelength and the linear absorption coefficient is investigated. We propose specific superlattice parameters that optimize absorption for superlattices grown on GaSb at three cutoff wavelengths. |
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