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Electrons and excitons in an imperfect superlattice in electric fields |
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| Affiliation: | 1. Division of Industrial Metrology, Korean Research Institute of Standards and Science, Daejeon 34113, Republic of Korea;2. Department of Physics, Yeungnam University, Gyeongsan 38541, Republic of Korea;3. Department of Electrical Engineering, Sejong University, Seoul 05006, Republic of Korea;1. IES, Univ. Montpellier, CNRS, F-34000 Montpellier, France;2. CTM, Univ. Montpellier, F-34000 Montpellier, France;3. C2N, CNRS- Univ. Paris-Sud, Univ. Paris-Saclay, 10 Avenue Thomas Gobert, F-91120 Palaiseau, France;1. School of Instrument Science and Opto-Electronics Engineering, Hefei University of Technology, Hefei, 230009, China;2. Key Laboratory of the Ministry of Education for Optoelectronic Measurement Technology and Instrument, Beijing Information Science & Technology University, Beijing, 100192, China |
| Abstract: | We present variational calculations of excitonic states in a superlattice coupled with a wide quantum well in electric fields. The electronic states in the structure are analyzed by using both exact solutions of the one-dimensional Schrödinger equation and the simple tight-binding approximation. We demonstrate the latter method to be well applicable to calculating and designing complicated irregular superlattices. The electron spectrum can be conveniently interpreted as a result of field-induced mixing and anticrossing of electron quantized states in the enlarged quantum well with non-equidistant Stark-ladder states in the semi-infinite ideal superlattice. The electron-hole Coulomb attraction results in a relative redistribution between the extended and the localized states in the exciton. The allowance for this redistribution has a particularly strong influence upon the exciton oscillator strength and radiative lifetime. |
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