Energy levels of single nonabrupt GaAs/AlxGa1-xAs quantum wells |
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| Institution: | 1. Department of Physics, College of Sciences & Humanities-Jubail, Imam Abdulrahman Bin Faisal University, Saudi Arabia;2. Basic and Applied Scientific Research Center, Imam Abdulrahman Bin Faisal University, Dammam, Saudi Arabia;3. Department of Physics, College of Sciences, Imam Abdulrahman Bin Faisal University, Dammam, Saudi Arabia;4. Department of Chemical & Environmental Engineering, Materials Science & Engineering Program, Department of Physics & Astronomy, Department of Chemistry, University of California-Riverside, Riverside, CA, USA;1. LPS, FSDM, Sidi Mohammed Ben Abdellah University, Fes, Morocco;2. 2SPME Group, ENSAM, Hassan II University, Casablanca, Morocco;3. Faculty of Sciences, Selcuk University, Konya, Turkey |
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| Abstract: | Energy levels of electrons in nonabrupt GaAs/AlxGa1-xAs single quantum wells are calculated with and beyond the constant interfacial effective mass approximation (CIEMA), and compared with those of abrupt GaAs/AlxGa1-xAs quantum wells. For a given interface width, the energy levels calculated with the CIEMA are higher than those calculated beyond it, but both are higher than those of the abrupt semiconductor quantum well. The shifts of the energy levels increase with the interfacial width of the nonabrupt quantum well, as well as with the degree of interfacial asymmetry. |
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