首页 | 本学科首页   官方微博 | 高级检索  
     检索      


Photoreflectance study of folded above-barrier states in (InAs)1/(GaAs)m strained-layer superlattices
Institution:1. Functional Nanomaterials Research Laboratory, Department of Physics, Doon University, Dehradun, Uttarakhand 248001, India;2. Materials and Device Laboratory, Department of Physics, Indian Institute of Technology Indore, Indore 453552, India;3. Materials Science Division, Inter-University Accelerator Centre, New Delhi 110067, India;4. Department of Physics & Centre for Interdisciplinary Research, University of Petroleum and EnergyStudies (UPES) Dehradun, Uttarakhand 248007, India;5. Department of Physics, Geetanjali Institute of Technical Studies, Udaipur, Rajasthan 313001, India;6. Department of Chemistry, Doon University, Dehradun, Uttarakhand 248001, India
Abstract:We have performed a photoreflectance study of the above-barrier states in (InAs)1/(GaAs)m strained-layer superlattices (m=10 and 30 monolayers) grown on a (001) GaAs substrate by molecular-beam epitaxy. We have clearly observed the optical transitions associated with the above-barrier states at the Γ and π (mini-Brillouin-zone edge) points. The layer-thickness dependence of the transition energies is explained by the zone-folding effect on the above-barrier states based on a simple Kronig-Penney analysis taking account of the lattice-misfit strain effects.
Keywords:
本文献已被 ScienceDirect 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号