The I-V characteristics of double barrier stair-wells |
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| Institution: | 1. Universidad Politécnica de Cartagena, Facultad de Ciencias de la Empresa, Cartagena Murcia, Spain;2. The University of Toronto at Mississauga, 3359 Mississauga Road, Mississauga, Ontario, L5L 1C6 Canada;1. Department of Chemical and Biological Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180, USA;2. Department of Chemistry and Chemical Biology, Rensselaer Polytechnic Institute, Troy, NY 12180, USA;3. Department of Biology, Rensselaer Polytechnic Institute, Troy, NY 12180, USA;1. ICube laboratory, CNRS and Université de Strasbourg, 23 rue du Loess, 67037 Strasbourg, France;2. Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), UMR 7504 CNRS and Université de Strasbourg, 23 rue du Loess, BP 43, F-67034 Strasbourg Cedex 2, France |
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| Abstract: | We investigated the I-V characteristics of the double barrier stair-well structure. Resonant tunneling current is achieved by application of an electric field, which increases the transmission under positive bias and decreases it under the reverse bias. This asymmetry can be used for rectification and the device works as a quantum diode. Furthermore, the same structure can perform, under negative bias, resonant tunneling processes with different characteristics. |
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