首页 | 本学科首页   官方微博 | 高级检索  
     


Spectroscopy studies of highly acceptor doped GaAs/AlGaAs quantum wells
Affiliation:1. Biological Chemistry and Chemometrics, Institute of Chemistry, Federal University of Rio Grande Do Norte, Natal 59072-970, RN, Brazil;2. Laboratory of Molecular Biology for Infectious Diseases and Cancer, Department of Microbiology and Parasitology, Federal University of Rio Grande Do Norte, Natal 59072-970, Brazil;3. Laboratory of Virology, Institute of Tropical Medicine, Federal University of Rio Grande Do Norte, Natal 59072-970, Brazil;1. Departamento de Química Física, Facultad de Química, Regional Campus of International Excellence “Campus Mare Nostrum”, Universidad de Murcia, 30100, Murcia, Spain;2. Department of Chemistry, Physical & Theoretical Chemistry Laboratory, Oxford University, South Parks Road, Oxford, OX1 3QZ, United Kingdom;1. Department of Physics, Faculty of Mathematic and Natural Science, Institut Teknologi Bandung, Jl. Ganesha No. 10, Bandung 46123, Indonesia;2. Center of Excellence in Glass Technology and Materials Science (CEGM), Nakhon Pathom Rajabhat University, 85 Malaiman Road, Nakhon Pathom 73000, Thailand;3. Physics Program, Faculty of Science and Technology, Nakhon Pathom Rajabhat University, 85 Malaiman Road, Nakhon Pathom 73000, Thailand
Abstract:We present a theoretical and experimental study of optical properties on highly acceptor doped QWs. Steady state photoluminescence (PL) and PL excitation (PLE) results are compared with theoretical calculations involving exchange and correlation effects for the electron-hole system and their interaction with acceptor ions. We have studied the effects of impurity doping at levels varying from 108 up to 1013 cm-2. Excitons can still be detected at high hole concentrations above the degenerate limit. They survive due to the inefficiency of screening in the 2D system.
Keywords:
本文献已被 ScienceDirect 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号