Current rectification through a single-barrier resonant tunneling quantum structure |
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Affiliation: | 1. Institute of Computational Modelling SB RAS Akademgorodok 50–44, Krasnoyarsk 660036, Russia;2. Siberian Federal University, Svobodny 79, Krasnoyarsk 660041, Russia;3. Federal Research Center KSC SB RAS, Akademgorodok 50–38, Krasnoyarsk 660036, Russia;4. Reshetnev Siberian State University of Science and Technology, Krasnoyarsk 660037, Russia |
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Abstract: | We propose a simple quantum structure which exhibits resonant tunneling under one bias and simple tunneling under the opposite one, thus acting as a rectifier. The diode consists of a single laterally-indented barrier. Due to its particular conduction-band profile, electrons undergo resonant tunneling when the bias creates a band-profile triangular well which can contain a resonant state aligned to the emitter Fermi energy. A diode with an active layer of ≈ 100Å, realized by AlGaAs/GaAs, has a Rectification Ratio, calculated at the current-peak bias at resonance, of ≈ 100. This value can be enhanced by putting in series several elements of this kind. |
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