Photovoltaic spectroscopy of InGaAsP/InP multiple quantum wells |
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| Affiliation: | Physics Department, University of Ottawa Ottawa, Canada KIN 6N5 and Institute for Microstructural Sciences National Research Council Ottawa, Canada K1A 0R6;Department of Physics, “Politehnica” University of Bucharest, Romania;Department of Electronic Science, Berhampur University, Berhampur, Odisha, India |
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| Abstract: | Photovoltaic Spectroscopy is used to study lattice matched Au/InGaAsP/InP multiple quantum wells at 4.2 < T < 300 K. Four quantum transitions are clearly identified in the spectra and their temperature shift mapped. The Au/InGaAsP Schottky barrier is found to be nearly temperature independent at φB ≃ 0.68 eV, and the binding energy of the 11H associated exciton estimated at Eb ≃ 11 meV. The 11H exciton displays a small electric field shift, to the red at low T, changing over to a blue shift at higher temperatures. |
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