埋氧注氮工艺对部分耗尽SOI PMOSFET顶栅氧的辐射硬度的影响

研究了埋氧注氮对部分耗尽SOI PMOSFET顶栅氧的总剂量辐射硬度所造成的影响。注入埋氧的氮剂量分别是8×1015 , 2×1016 和1×1017cm-2。实验结果表明，辐照前，晶体管的阈值电压随氮注入剂量的增加向负方向漂移。在正2V的栅偏压下，经5×105 rad(Si)的总剂量辐照后，同埋氧未注氮的晶体管相比，埋氧注氮剂量为8×1015 cm-2的晶体管呈现出了较小的阈值电压漂移量。然而，当注氮剂量高达2×1016 和 1×1017cm-2时，所测大多数晶体管的顶栅氧却由于5×105 rad(Si)的总剂量辐照而受到了严重损伤。另外，对于顶栅氧严重受损的晶体管，其体-漏结也受到了损伤。所有的实验结果可通过氮注入过程中对顶硅的晶格损伤来解释。

Effect of the technology of implanting nitrogen into buried oxide on the radiation hardness of the top gate oxide for partially depleted SOI PMOSFET

The effect of implanting nitrogen into buried oxide on the top gate oxide hardness against total irradiation does has been investigated with three nitrogen implantation doses (8×10¹⁵, 2×10¹⁶ and 1×10¹⁷cm^-2) for partially depleted SOI PMOSFET. The experimental results reveal the trend of negative shift of the threshold voltages of the studied transistors with the increase of nitrogen implantation dose before irradiation. After the irradiation with a total dose of 5×10⁵rad(Si) under a positive gate voltage of 2V, the threshold voltage shift of the transistors corresponding to the nitrogen implantation dose 8×10¹⁵cm^-2 is smaller than that of the transistors without implantation. However, when the implantation dose reaches 2×10¹⁶ and 1×10¹⁷cm^-2, for the majority of the tested transistors, their top gate oxide was badly damaged due to irradiation. In addition, the radiation also causes damage to the body-drain junctions of the transistors with the gate oxide damaged. All the results can be interpreted by tracing back to the nitrogen implantation damage to the crystal lattices in the top silicon.