Cathodoluminescence of ZnSe(Bi):Al crystals |
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Authors: | V S Vavilov M V Chukichev R R Rezvanov A A Klyukanov K D Sushkevich E K Sushkevich |
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Institution: | (1) M. V. Lomonosov Moscow State University, 119899 Moscow, Russia;(2) Moldovan State University, 277009 Kishinev, Moldova |
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Abstract: | The cathodoluminescence (CL) in ZnSe crystals annealed at T=1200 K in a Bi melt containing an aluminum impurity is investigated. The spectra are recorded for different excitation levels,
temperatures, and detection delay times t
0. As t
0 is increased, the intensity of the orange band at λ
max=630 nm (1.968 eV) in the CL spectrum decreases in comparison to the intensity of the dominant yellow-green band at λ
max=550 nm (2.254 eV), whose half-width increases in the temperature range 6–120 K and then decreases as the temperature increases
further. It is shown that such behavior of the yellow-green band is caused by the competition between two processes: recombination
of donor-acceptor pairs and of free electrons with holes trapped on acceptors. The former mechanism is dominant at low temperatures,
and the latter mechanism is dominant at high temperatures. At T∼120 mK the contributions of the two mechanisms to the luminescence are comparable. The resultant structureless band then
achieves its greatest half-width, which is dictated by the interaction of the recombining charge carriers with longitudinal-optical
and longitudinal-acoustic phonons and with the free-electron plasma. The mean number of longitudinal-optical phonons emitted
per photon is determined mainly by their interaction with holes trapped on deep acceptors in the form of Al atoms replacing
Se. The donor in the pair under consideration is an interstitial Al atom.
Fiz. Tverd. Tela (St. Petersburg) 39, 1526–1531 (September 1997) |
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