| 用椭偏法分析单波段及双波段兼容a－C：H增透膜 |
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| 引用本文： | 许念坎,郭力军,刘正堂,郑修麟. 用椭偏法分析单波段及双波段兼容a－C：H增透膜[J]. 光学学报, 1995, 15(2): 230-234 |
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| 作者姓名： | 许念坎 郭力军 刘正堂 郑修麟 |
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| 作者单位： | 西北工业大学材料科学与工程系 |
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| 基金项目： | 航空航天部科学技术研究院资助 |
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| 摘 要： | 讨论了在单晶锗上为获得单波段（３～５μｍ）及双波段（３～５μｍ、８～１２μｍ）兼容ａ－Ｃ：Ｈ增透膜所必需的膜系设计，及用椭偏法对该膜进行的增透结果分析。结果表明，ａ－Ｃ：Ｈ膜是理想的红外增透膜。椭偏法对分析所制备的膜是否符合膜系设计要求及沉积工艺参数的确定具有重要意义。
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| 关 键 词： | 椭偏法，a－C：H膜，膜系设计 |
| 收稿时间： | 1993-09-20 |
Analysis of Antireflective and Simultaneouslly Antireflective a-C:H Films in Both Single-Double Band by Ellipsometry Method |
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| Xu Niankan, Guo Lijun, Liu Zhengtang, Zheng Xiulin. Analysis of Antireflective and Simultaneouslly Antireflective a-C:H Films in Both Single-Double Band by Ellipsometry Method[J]. Acta Optica Sinica, 1995, 15(2): 230-234 |
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| Authors: | Xu Niankan Guo Lijun Liu Zhengtang Zheng Xiulin |
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| Abstract: | The design of film system for obtaining a-C:H films on Ge single crystal withantireflective or simultuncouslly antireflective effect in both single band (3~5 μm) anddouble bands (3~5 μm and 8~12 μm) was studied. The analysis of the antireflectiveeffect of these films with the aid of a ellipsometer was discussed. The results show that a C:H film could be used as an ideal IR antireflection material. It was also found thateilipsometry analysis was essential for both studying on it the films will or will not be in accordance with the film system design and determining the deposition conditions. |
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| Keywords: | ellipsometry method a-C:H film design of film system. |
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