Noise reduction in sputtered W/GaAs Schottky junctions |
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| Authors: | Q. P. Pham W. M. Kelly J. O''Brien |
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| Affiliation: | (1) National Microelectronics Research Centre, University College, Lee Maltings, Prospect Row, Cork, Ireland |
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| Abstract: | The noise characteristics of sputtered W/GaAs Schottky diodes, annealed at temperatures up to 700°C, have been investigated. A useful figure of merit for such millimeter and submillimeter mixer diodes is the noise performance at an RF where accurate measurements are available. Noise temperatures measured at a typical mixer intermediate frequency of 4GHz under DC biased conditions have been reduced significantly by rapid thermal annealing. The best noise data have been obtained with an annealing time of 2 minutes at 600°C and are consistent with good mixer performance. |
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