| 硼扩散片弯曲度的控制技术研究 |
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| 引用本文： | 王春梅,佟丽英,史继祥,王聪. 硼扩散片弯曲度的控制技术研究[J]. 电子工业专用设备, 2010, 39(8): 26-27,44 |
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| 作者姓名： | 王春梅 佟丽英 史继祥 王聪 |
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| 作者单位： | 中国电子科技集团公司第四十六研究所,天津,300220 |
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| 摘 要： | 对硼扩散片弯曲度的控制技术进行了研究。结果发现单面扩散后硅片的弯曲度比双面扩散的弯曲度大,晶锭加工之前的热处理工艺有助于弯曲度的改善。在单面减薄后对硅片进行碱处理工艺,进一步改善了扩散片的弯曲度。通过对硅单晶进行热处理、以及对硅扩散片进行碱处理等一系列措施,使扩散片的弯曲度有了较大幅度的改善。
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| 关 键 词： | 硼 扩散 硅片 弯曲度 |
Study on Controlling of the Bow in Boron Diffusion Silicon Wafer |
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| WANG Chunmei,TONG Liying,SHI Jixiang,WANG Cong. Study on Controlling of the Bow in Boron Diffusion Silicon Wafer[J]. Equipment for Electronic Products Marufacturing, 2010, 39(8): 26-27,44 |
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| Authors: | WANG Chunmei TONG Liying SHI Jixiang WANG Cong |
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| Affiliation: | WANG Chunmei,TONG Liying,SHI Jixiang,WANG Cong (The 46th Research Institute of China Electronics Technology GROUP Corporation,Tianjin 300220,China) |
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| Abstract: | In this paper, the technology of controlling bow in boron diffusion silicon wafer was studied. The results showed that the bow in one-side diffusion silicon wafer is much larger than in double-side diffusion silicon wafer. The process of heat treatment in silicon crystal rods helped to improve the bow. Through a series of methods on the silicon crystal,the boron diffusion silicon wafer was improved markedly. |
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| Keywords: | Boron Diffusion Silicon wafer Bow |
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