|
|||||
|
|
A study of estimation method for conduction band offset in semiconductor heterostructure by using triple-barrier resonant tunneling diodes |
|
| Authors: | Susumu Ohki Hiroki Funato Michihiko Suhara Tsugunori Okumura Lars-Erik Wernersson Werner Seifert |
| Institution: | a Department of Electrical Engineering, Tokyo Metropolitan University, 1-1 Minami Ohsawa, Hachioji, Tokyo 192-0397, Japan b Solid State Physics/Nanometer Structure Consortium, Lund University, P.O. Box 118, S-221 00 Lund, Sweden |
| Abstract: | A method for evaluating a band offset of a heterojunction is proposed by measuring temperature dependence of current–voltage (I–V) characteristics in triple-barrier resonant tunneling diodes (TBRTDs). The method was applied for investigating a conduction band offset by using GaAs0.25P0.75/GaAs TBRTDs with thin strain heterobarriers grown by MOCVD and ΔEc was estimated as 200–240 meV. In the strain-barrier TBRTDs, negative differential resistance was observed below 100 K. |
| Keywords: | GaAsP/GaAs Triple-barrier resonant tunneling diodes Band offset Strain barrier Heterointerface Thermionic emission |
| 本文献已被 ScienceDirect 等数据库收录！ | |