首页 | 本学科首页   官方微博 | 高级检索  
     检索      


Distinct orientation of AlN thin films deposited on sapphire substrates by laser ablation
Authors:J Meinschien  F Falk  R Hergt  H Stafast
Institution:(1) Department of Physics, Fujian Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen, 361005, P.R. China
Abstract:We report the experimental characterization of the charged species produced in excimer laser ablation of a superconducting intermetallic compound (YNi2B2C). By using energy-selective time-of-flight mass spectrometry, we have obtained direct measurements of both mass spectra and kinetic energy distributions of ions. The investigation has been carried out in the laser fluence range 1-5 J cm-2, which is typical of laser ablation thin film deposition. High kinetic energies of the charged component (up to 0.4 keV) have been observed even at moderate laser fluences.
Keywords:
本文献已被 SpringerLink 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号