Distinct orientation of AlN thin films deposited on sapphire substrates by laser ablation |
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Authors: | J Meinschien F Falk R Hergt H Stafast |
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Institution: | (1) Department of Physics, Fujian Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen, 361005, P.R. China |
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Abstract: | We report the experimental characterization of the charged species produced in excimer laser ablation of a superconducting intermetallic compound (YNi2B2C). By using energy-selective time-of-flight mass spectrometry, we have obtained direct measurements of both mass spectra and kinetic energy distributions of ions. The investigation has been carried out in the laser fluence range 1-5 J cm-2, which is typical of laser ablation thin film deposition. High kinetic energies of the charged component (up to 0.4 keV) have been observed even at moderate laser fluences. |
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