| 蓝宝石衬底表面的高精密加工工艺 |
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| 引用本文： | 牛新环,檀柏梅,赵晓宏,刘玉岭.蓝宝石衬底表面的高精密加工工艺[J].半导体学报,2007,28(Z1). |
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| 作者姓名： | 牛新环 檀柏梅 赵晓宏 刘玉岭 |
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| 作者单位： | 河北工业大学信息工程学院,微电子研究所,天津,300130 |
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| 基金项目： | 天津市自然科学基金，教育部高等学校博士学科点专项科研基金，国家自然科学基金 |
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| 摘 要： | 为了获得优化的CMP参数变化,对实验进行了设计,并采用CMP方法在C6382I-W/YJ单面抛光机上对蓝宝石衬底表面进行了加工.根据蓝宝石衬底特性,选择了碱性抛光液,并选用SiO2胶体作为磨料.依据高去除的目的,对如底盘转速、抛光液流量、温度及压力等不同工艺参数进行了研究.根据实验结果,确定了蓝宝石衬底表面的CMP最佳工艺参数.
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| 关 键 词： | 蓝宝石衬底 高精密加工 化学机械抛光 碱性抛光液 工艺 |
High Precision Finishing Process for Sapphire Substrate Surface |
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| Niu Xinhuan,Tan Baimei,Zhao Xiaohong,Liu Yuling.High Precision Finishing Process for Sapphire Substrate Surface[J].Chinese Journal of Semiconductors,2007,28(Z1). |
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| Authors: | Niu Xinhuan Tan Baimei Zhao Xiaohong Liu Yuling |
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| Abstract: | We studied the design of experiments in order to obtain optimized chemical mechanical polishing(CMP)equipment variables and treated sapphire substrate surfaces using the CMP method on a C6382I-W/YJ single side polisher. According to sapphire substrate and its product properties, we chose alkali slurry and took SiO2 sol as abrasive. Various process parameters,such as table speed,slurry flow rate,temperature and down force, were investigated from the viewpoint of high removal rate. Through the experiment results, we determined the optimal CMP process parameters. |
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| Keywords: | sapphire substrates high precision finishings chemical mechanical polishing alkali slurry process |
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