用于器件描述和电路仿真的新型多晶硅TFT直流模型

提出一种新型的多晶硅薄膜晶体管电流-电压物理模型.考虑了陷阱态密度的V形指数分布,运用Lambert W函数推出了表面势的显式求解方法,大大提高了运算效率,在电路仿真中发挥了重要作用.基于指数的陷阱态密度和计算的表面势,描述了亚阈值区和强反型区的漏电流特性.推导了完整、统一的漏电流表达式,包括翘曲效应.在很广的沟道长度范围和工作区内,模型和实验数据一致.

A New Poly-Si TFTs DC Model for Device Characterization and Circuit Simulation

A new physical current-voltage model for polysilicon thin-film transistors (poly-Si TFTs) is presented.Taking the V-shaped exponential distribution of trap states density into consideration,explicit calculation of surface potential is derived using the Lambert W function,which greatly improves computational efficiency and is critical in circuit simulation.Based on the exponential density of trap states and the calculated surface potential,the drain current characteristics of the subthreshold and the strong inversion region are predicted.A complete and unique drain current expression,including kink effect,is deduced.The model and the experimental data agree well over a wide range of channel lengths and operational regions.