The tail of localized states in the band gap of the quantum well in the In0.2Ga0.8N/GaN system and its effect on the laser-excited photoluminescence spectrum |
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| Authors: | Jacobson M A Nelson D K Konstantinov O V Matveentsev A V |
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| Institution: | (1) Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia |
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| Abstract: | Semiconductors - It is established experimentally that the peak in the photoluminescence spectrum of the In0.2Ga0.8N/GaN heterostructure with a quantum well shifts by ～150 meV as the power... |
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