| SOI MOSFET转移特性中的深度饱和现象研究 |
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| 引用本文： | 郝跃,朱建纲,郭林,张正幡.SOI MOSFET转移特性中的深度饱和现象研究[J].物理学报,2001,50(1):120-125. |
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| 作者姓名： | 郝跃 朱建纲 郭林 张正幡 |
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| 作者单位： | (1)四川固体电路研究所,重庆400060; (2)西安电子科技大学理学院 ,西安 71 0 0 71 |
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| 基金项目： | 国防预先基金(批准号：8.5.3.4)资助的课题.
Project supported by the National Defense Foundation of China (Grant No.8.5.3.4). |
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| 摘 要： | 关键词：
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| 关 键 词： | 深度饱各 热载流子 界面陷阱 SOI器件 MOSFET |
| 修稿时间： | 2000年3月27日 |
THE DEEP-SATURATION STUDY OF DRAIN CURRENT IN SOI MOSFET'S TRANSFER CHARACTERISTICS |
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| HAO YUE,ZHU Jian-gang,GUO LIN,ZHANG Zheng-fan.THE DEEP-SATURATION STUDY OF DRAIN CURRENT IN SOI MOSFET'S TRANSFER CHARACTERISTICS[J].Acta Physica Sinica,2001,50(1):120-125. |
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| Authors: | HAO YUE ZHU Jian-gang GUO LIN ZHANG Zheng-fan |
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| Abstract: | In this work, the electric characteristics of SOI MOSFET are investigated. The deep-saturation of drain current in transfer character is found in many transistors. After applying the channel hot-carriers stress, the electric parameters degradation is very different from that of the normal transistors. It has been shown that the deep-saturation effect in NMOSFET disappears after stress, but in PMOS, this effect is not weakened by hot-carriers injection. The results are of importance for reliability designing and reliability strengthening of SOI devices. |
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| Keywords: | SOI deep-saturation hot-carriers interface-trap |
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