InAlN薄膜MOCVD外延生长研究

为了研究不同压力和不同模板对InA lN薄膜外延生长的影响,分别选取以GaN为模板时生长压力为4.00、6.67和13.33 kPa,压力为4.00 kPa时模板为GaN和A lN这两组条件进行实验比较。研究发现,随着生长压力的增加,样品中In含量降低,样品的粗糙度则随压力的增加而增大;压力为4.00 kPa时,分别以摇摆曲线半高宽(FWHM)为86.97″的A lN和224.1″的GaN为模板,发现A lN模板上生长的InA lN样品(002)和(102)峰的FWHM值及表面粗糙度比上述GaN为模板生长的InA lN样品都要小很多。综合以上结果可初步得知:降低压力可以优化InA lN薄膜的表面形貌,增加In组分含量;采用高质量的A lN作模板能生长出晶体质量和表面形貌都比较好的InA lN薄膜。

Research on InAlN Film Grown by Metal Organic Chemical Vapor Deposition

The effects of different pressures and different templates on InAlN epilayer were studied.Two sets of growing conditions,4.00,6.67 and 13.33 kPa with GaN template,GaN and AlN templates both under 4.00 kPa,were used in this experiment.The experiment and measurement results showed that In content in InAlN films decreased while the surface roughness increased as the pressure increased.Results of using AlN template with 86.97″ full width at half maximum(FWHM)value of rocking curve and GaN template with 224.1″ FWHM value,respectively,to grow InAlN film under 4.00 kPa,showed that(002)and(102)FWHM values and surface roughness of InAlN growing on AlN template were both much smaller than that of InAlN growing on GaN template.A primary conclusion is proposed that the better surface morphology and larger In content of InAlN epilayer can be got when decreasing the growth pressure,and high-quality and flat InAlN film can be made by using high-quality AlN template.