Hybrid technique for growing homogeneous single crystals of semiconductor solid solutions from melt

A concept and fundamentals of a hybrid technique for growing homogeneous single crystals of semiconductor solid solutions (SSs) from melt are presented. The growth consists of two stages. In the first stage, a single crystal with a specified concentration of the more refractory component is grown by an innovative method of directional constitutional supercooling of a melt in the steady-state mode. In the second stage, the melt is fed with the second component. Using an example of the classical Ge-Si system, the concentration profiles of the components along the crystal axis are calculated and the SS growth dynamics ensuring single crystallinity over the entire ingot length is determined. An analysis of the results yields the optimal technological parameters and conditions for growing homogeneous single crystals of SSs of a specified composition and size.