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Ellipsometric technique for determining in situ the absorption coefficient of semiconducting nanolayers |
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| Authors: | N. N. Kosyrev V. A. Shvets N. N. Mikhailov S. N. Varnakov S. G. Ovchinnikov S. V. Rykhlitskii I. A. Yakovlev |
| Affiliation: | 1. Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, Akademgorodok 50/38, Krasnoyarsk, 660036, Russia 2. Novosibirsk State University, ul. Pirogova 2, Novosibirsk, 630090, Russia 3. Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090, Russia 4. Reshetnikov Siberian State Aerospace University, pr. Krasnoyarskii Rabochii 31, Krasnoyarsk, 660014, Russia |
| Abstract: | An algorithm that makes it possible to solve the inverse problem of ellipsometry aimed at determining the absorption coefficient on the basis of a single-zone ellipsometric experiment during the growth of thin semiconducting films is developed and implemented. The technique is based on analysis of the variation of ellipsometric parameters Ψ and Δ directly during the growth. The algorithm is tested in synthesis of Si/SiO2/Si(100) and Hg1 ? x Cd x Te structures. |
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