Electrophysical characteristics and structural parameters of metamorphic HEMT nanoheterostructures In0.7Al0.3As/In0.7Ga0.3As/In0.7Al0.3As containing superlattices with different numbers of periods in the metamorphic buffer |
| |
| Authors: | G. B. Galiev S. S. Pushkarev A. S. Orekhov R. R. Galiev E. A. Klimov P. P. Maltsev R. M. Imamov |
| |
| Affiliation: | 1. Institute of Ultrahigh Frequency Semiconductor Electronics, Russian Academy of Sciences, 117105, Moscow, Russia
2. Shubnikov Institute of Crystallography, Russian Academy of Sciences, Leninskii pr. 59, Moscow, 119333, Russia
|
| |
| Abstract: | The results of studying the electrophysical characteristics and structural parameters of metamorphic In0.7Al0.3As/In0.7Ga0.3As/In0.7Al0.3As HEMT nanoheterostructures epitaxially grown on GaAs (100) substrates have been presented. A linear metamorphic buffer with inserted unbalanced superlattices characterized by different numbers of periods is used. Transmission electron microscopy has shown that an increase in the number of superlattice periods from 5 to 30 promotes the improvement of the crystal structure. In this case, the electrophysical parameters of metamorphic HEMT nanoheterostructures are also significantly improved. |
| |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ |
|
