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AES quantitative interpretation of the first stages of Pd2Si formation during Pd adsorption on Si(111) at room temperature |
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| Authors: | H Roux andN Boutaoui M Tholomier |
| Institution: | Département de Physique des Matériaux, Université Claude Bernard Lyon I, 43 Boulevard du 11 Novembre 1918, F-69622, Villeurbanne Cedex, France Laboratoire de Photoélectricité des Semiconducteurs, Case 251, Faculté des Sciences Saint Jérôme, F-13397, Marseille Cedex, France |
| Abstract: | The quantitative analysis of the evolution of Pd and Si N(E) Auger peak amplitudes has been carried out as a function of Pd concentration on a Si(111) surface. Modelization of these evolutions has allowed us to conclude that the formation of the Pd2Si silicide occurs from the beginning of Pd adsorption even at room temperature. |
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