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Amorphous silicon diodes and TFTs for active matrix flat panel display applications
Authors:J. Magariño
Affiliation:(1) Central Research Laboratory THOMSON-CSF, B.P. No. 10, F-91401 Orsay Cedex, France
Abstract:The use of a-Si devices (diodes and transistors) in active matrix flat-panel displays is reviewed. The fabrication of the elements and their characteristics with steady and pulsed applied potentials are discussed. Two experimental arrays of 32×32 BBDs and 256×320 TFTs are shown.Part of this work is supported by CEE under Esprit program No. 833
Keywords:85.60  61.40
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