| 2~26GHzGaAs单片功率放大器 |
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| 引用本文： | 陈雪军,高建峰,陈效建,林金庭.2~26GHzGaAs单片功率放大器[J].电子学报,2000,28(11):140-142. |
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| 作者姓名： | 陈雪军 高建峰 陈效建 林金庭 |
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| 作者单位： | 南京电子器件研究所,南京 210016 |
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| 摘 要： | 报道了一个具有低噪声性能的2~26GHz GaAs超宽带单片功率放大器的研究结果,介绍了模型提取、电路设计和单片制作的全过程.放大器采用分布式设计,在超宽带频率范围内增益为6.5±0.5dB,输入输出驻波比小于2.0.在2~20GHz内测得输出功率大于300mW,噪声系数为3.5~5.5dB.单片放大器包括所有匹配、隔直及偏置电路,芯片面积为3.2mm×1.275mm×0.1mm.
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| 关 键 词： | 微波单片集成电路 超宽带功率放大器 高电子迁移率晶体管 低噪声 HP Root模型 |
| 文章编号： | 0372-2112(2000)11-0140-03 |
| 收稿时间： | 1999-09-14 |
A 2-26 GHz GaAs Monolithic Power Amplifier |
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| CHEN Xue-jun,GAO Jian-feng,CHEN Xiao-jian,LIN Jin-ting.A 2-26 GHz GaAs Monolithic Power Amplifier[J].Acta Electronica Sinica,2000,28(11):140-142. |
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| Authors: | CHEN Xue-jun GAO Jian-feng CHEN Xiao-jian LIN Jin-ting |
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| Institution: | Nanjing Electronic Devices Institute,Nanjing 210016,China |
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| Abstract: | This paper describes the modeling,design,fabrication and performance of a monolithic 2~26 GHz GaAs Power Amplifier with low noise characteristic.By using distributed circuit and series gate capacitors,the measured gain is 6.5±0.5dB with both in and out VSWR less than 2.0 in the broad band,and the measured output power is over 300 mW with 3.5~5.5dB noise figure in 2~20 GHz frequency range.The amplifier is truly monolithic,with all matching and biasing and DC block circuitry included on the chip.The chip size is 3.2mm×1.275mm×0.1mm. |
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| Keywords: | MMIC distributed power amplifier PHEMT low noise HP Root model |
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