首页 | 本学科首页   官方微博 | 高级检索  
     检索      

p-n结电场分布的一种解析法
引用本文:李肇基,李忠民,陈星弼.p-n结电场分布的一种解析法[J].半导体学报,1990,11(2):144-147.
作者姓名:李肇基  李忠民  陈星弼
作者单位:电子科技大学 成都 (李肇基,李忠民),电子科技大学 成都(陈星弼)
摘    要:本文发展一种求解泊松方程解的电势与电场的超定方程组的新方法,获得p—n结非对称圆柱解下的圆柱结与平面结相匹配的电势与电场分布及椭圆圆柱解下两者相统一的电场分布公式。将两种解与迄今常用的对称圆柱解进行了比较,发现前者更符合实际。

关 键 词:P-n结  电场分布  泊松方程  解析法

An Analytical Approach of Field Profile of p-n Junction
LI Zhaoji/University of Electronic and Science Technology of China,ChengduLi Zhongmin/University of Electronic and Science Technology of China,ChengduCHEN Xingbi/University of Electronic and Science Technology of China,Chengdu.An Analytical Approach of Field Profile of p-n Junction[J].Chinese Journal of Semiconductors,1990,11(2):144-147.
Authors:LI Zhaoji/University of Electronic and Science Technology of China  ChengduLi Zhongmin/University of Electronic and Science Technology of China  ChengduCHEN Xingbi/University of Electronic and Science Technology of China  Chengdu
Abstract:A trans cendental equation of potential and electronic field of a p-n junction are solvedwith weighted algorithm for least squares. A matched and unified solution, which are usefulfor research of high-voltage devices, are obtained between cylindric and planar junctions underasymmetry and elliptic cylindric.
Keywords:P-n junction  Field profile Poisson's equation  Analytical solution least  squares algorithm
本文献已被 CNKI 维普 等数据库收录!
点击此处可从《半导体学报》浏览原始摘要信息
点击此处可从《半导体学报》下载免费的PDF全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号