Deposition of silicon oxynitride films by ion beam sputtering at room temperature |
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| Authors: | Huang-Lu Chen Jin-Cherng Hsu |
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| Affiliation: | (1) Graduate Institute of Applied Science and Engineering, Fu-Jen Catholic University, Taipei County, 24205, Taiwan;(2) Department of Physics, Fu-Jen Catholic University, Taipei County, 24205, Taiwan |
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| Abstract: | Silicon oxynitride films, possessing various compounds of SiO2 and Si3N4, were deposited by ion beam sputtering at room temperature. This technique can easily and precisely control the refractive index and composition of the silicon oxynitride film. Properties of these films, such as the refractive index, the extinction coefficient, the surface roughness, and so on were measured in this study. |
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| Keywords: | IBSD ion beam sputtering silicon oxynitride room temperature |
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