新型AgInSbTe相变薄膜的光学及记录性能

利用直流磁控溅射法制备了一种新型AgInSbTe相变薄膜。示差扫描量热(DSC)实验测定的结晶峰温度为193．92℃。X射线衍射(XRD)表明未经热处理的沉积态薄膜是非晶态，而经过200℃热处理，X射线衍射图出现衍射峰，薄膜从非晶态转变到晶态。同时，研究了晶态和非晶态相变薄膜的吸收率、透射率和反射率随波长的变化。测定了650nm激光作用下的相变薄膜的记录性能，分析了记录功率、记录脉宽对薄膜反射率衬比度的影响，在同一记录脉宽条件下，记录功率越大，反射率衬比度也越大；在同一记录功率条件下，随记录脉宽的增加，反射率衬比度也增大。结果表明，新型AgInSbTe相变薄膜在激光作用下具有较高的反射率衬比度，可获得良好的记录性能。

Optical Properties and Recording Performance of the New Type AgInSbTe Phase Change Film

A new type of AgInSbTe phase change thin film is prepared by direct magnetron sputtering. The temperature for crystallization obtained by differential scanning calorimetry (DSC) is 193.92 ℃. The undeposited AgInSbTe is amorphous by the measurement of X-ray diffraction (XRD), while the phase change film is heated at 200 ℃, the peak could be observed by XRD, which indicated that the amorphous state had become a crystalline state. The variation of the absorption, transmission and reflectivity of the amorphous and crystalline phase change film with the wavelength are studied. The recording performance is measured at the 650 nm laser, the influences of the recording power and recording pulse on the reflectivity contrast are analysised. Under the same pulse, the higher the writing power is, the higher the reflectivity contrast is, and under the same writing power, the reflectivity contrast increased with pulse during increased. The results indicate the new type AgInSbTe phase change film irradiated by laser had a high reflectivity contrast, and a good recording performance could be obtained.