Dislocations in GaAs single crystals grown by the Czochralski method |
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| Authors: | L. Pekárek |
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| Affiliation: | (1) Popov Research Institute of Radiocommunications, Prague, Novodvorská 994, Praha 4, Czechoslovakia |
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| Abstract: | The influence was studied of growth conditions on the dislocation density in gallium arsenide single crystals grown by the Czochralski method from a gallium-enriched melt. Etching in a solution of 1 part cone. HNO3 and 2 parts H2O served to determine the dislocation density across and along a single crystal. The dislocation density along the crystal was found to depend mainly on the angle of crystal diameter increase. |
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