New CMOS compatible super junction LDMOST with n-type buried layer |
| |
Authors: | Duan Bao-Xing Zhang Bo and Li Zhao-Ji |
| |
Institution: | Microelectronics Institute, Xidian University, Xi'an 710071, China; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China |
| |
Abstract: | A new super-junction lateral double diffused MOSFET (LDMOST)
structure is designed with n-type charge
compensation layer embedded in the p$^{ - }$-substrate near the drain to
suppress substrate-assisted depletion effect that results
from the compensating charges imbalance between the pillars in the n-type buried
layer. A high
electric field peak is introduced in the surface by the pn junction
between the
p$^{ - }$-substrate and n-type buried layer, which given rise to a more uniform
surface electric field distribution by modulation effect. The effect of
reduced bulk field (REBULF) is introduced to improve the vertical breakdown voltage by reducing
the high bulk electric field around the drain. The new structure features
high breakdown voltage, low on-resistance and charges balance in the drift
region due to n-type buried layer. |
| |
Keywords: | super-junction LDMOST n-type buried layer REBULF breakdown voltage |
本文献已被 维普 等数据库收录! |
| 点击此处可从《中国物理 B》浏览原始摘要信息 |
| 点击此处可从《中国物理 B》下载免费的PDF全文 |
|