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Influence of Si-Doping on the Performance of InGaN/GaN Multiple Quantum Well Solar Cells |
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| Authors: | Chen Xin Zhao Bijun Li Shuti |
| Institution: | 1.School of Physics and Optoelectronic Engineering, Xidian University, 710071, Xi’an, China ;2.Laboratory of Nanophotonic Functional Materials and Devices, Institute of Optoelectronic Materials and Technology, South China Normal University, 510631, Guangzhou, China ; |
| Abstract: | Semiconductors - The performance of InGaN/GaN multiple quantum well (MQW) solar cells with five different Si-doping concentrations, namely 0, 4 × 1017 cm–3, 1 × 1018 cm–3, 3... |
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