Thin porous indium tin oxide nanoparticle films: effects of annealing in vacuum and air |
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| Authors: | J Ederth A Hultåker GA Niklasson P Heszler AR van Doorn MJ Jongerius D Burgard CG Granqvist |
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| Institution: | (1) Department of Engineering Sciences, The Ångström Laboratory, Uppsala University, PO Box 534, 75121 Uppsala, Sweden;(2) Research Group of Laser Physics of the Hungarian Academy of Sciences, University of Szeged, Box 406, 6701 Szeged, Hungary;(3) Philips Applied Technologies, PO Box 218/SAQ, 5600 MD Eindhoven, The Netherlands;(4) Nanogate GmbH, Gewerbepark Eschberger Weg, 66121 Saarbrücken, Germany |
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| Abstract: | Electrical and optical properties were investigated in porous thin films consisting of In2O3:Sn (indium tin oxide; ITO) nanoparticles. The temperature-dependent resistivity was successfully described by a fluctuation-induced tunneling model, indicating a sample morphology dominated by clusters of ITO nanoparticles separated by insulating barriers. An effective-medium model, including the effect of ionized impurity scattering, was successfully fitted to measured reflectance and transmittance. Post-deposition treatments were carried out at 773 K for 2 h in both air and vacuum. It is shown that vacuum annealing increases either the barrier width or the area between two conducting clusters in the samples and, furthermore, an extra optical absorption occurs close to the band gap. A subsequent air annealing then reduces the effect of the barriers on the electrical properties and diminishes the absorption close to the band gap. PACS 72.80.Jc; 81.07.Bc; 81.40.Tv |
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