Determination of zinc in gallium arsenide by electrothermal atomic absorption spectrometry with the L'vov platform and matrix modification

Summary A method is described for the determination of zinc in gallium arsenide by ETAAS with platform atomization and matrix modification. The sample is decomposed with nitric and hydrochloric acids, ortho-phosphoric acid is added as a matrix modifier and the diluted solution is injected into the furnace. The optical correction of the nonspecific absorbance is readily achieved by means of a conventional deuterium lamp. Platform atomization improves the peak repeatability by a factor often in comparison with wall atomization. For a 40 mg sample, with reduced argon flow rate in the atomization step, the detection limit is 0.08 g Zn g^–1 (4×10¹⁵ atoms cm^–3). Results obtained by analysing Zn-doped GaAs samples are presented. The relative standard deviation of the overall procedure is 4–8%.

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Bestimmung von Zink in Galliumarsenid durch ETAAS mit L'vov-Plattform und Matrixmodifizierung