Modeling and analysis of fully strained and partially relaxed lattice mismatched AlGaN/GaN HEMT for high temperature applications |
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| Authors: | Parvesh Gangwani Ravneet Kaur Sujata Pandey Subhasis Haldar Mridula Gupta R.S. Gupta |
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| Affiliation: | 1. Semiconductor Devices Research Laboratory, Department of Electronic Science, University of Delhi South Campus, New Delhi–110 021, India;2. Amity School of Engineering and Technology, New Delhi, India;3. Motilal Nehru College, University of Delhi, Benito Juarez Road, New Delhi–110 021, India |
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| Abstract: | The paper presents an accurate charge control model for a fully strained (FS), and partially relaxed (PR) lattice mismatched AlGaN/GaN HEMT, taking into consideration the effect of spontaneous and piezoelectric polarization. The model also accounts for the mobility degradation with increase in temperature, which is one of the major causes in deterioration of the driving current. By using the variation of band gap with temperature, the temperature dependence on threshold voltage, sheet carrier concentration and drain current is studied. Further, the temperature variation shows the applicability of the device in a variable thermal environment. A close agreement of calculated data with simulated/experimental data proves the validity of the model. |
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| Keywords: | AlGaN/GaN high electron mobility transistor Polarization Transconductance Temperature |
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