The effect of a surface layer capping p-InGaN/p-GaN superlattices on the contact to p-GaN |
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Authors: | Yian Yin Baolin LiuBaoping Zhang Guoxing Lin |
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Institution: | Department of Physics, Xiamen University, Xiamen, 361005, PR China |
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Abstract: | In this study, the influence of the surface layer (p-InGaN or p-GaN) capping p-InGaN/p-GaN superlattices (SLs) on the contact to p-type GaN was investigated. It was found that the specific contact resistance (ρc) to p-type GaN is lower when using p-InGaN as the surface layer. The lowest value of ρc was 1.99×10−4 Ω cm2 at room temperature. It was also found that low temperature growth of the p-GaN layers in the SLs is beneficial for lowering the ohmic contact resistance. Unlike Ni/Au deposited directly on p-GaN (without the strained p-InGaN/p-GaN SLs), Ni/Au deposited on p-InGaN/p-GaN SLs produces ohmic behavior even before annealing. |
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Keywords: | P-InGaN/p-GaN SLs Polarization-induced effect Ohmic contact CTLM |
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