Growth and characterization of pine-needle-shaped GaN nanorods by sputtering and ammoniating process |
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Authors: | Bao-li Li Hui-zhao ZhuangCheng-shan Xue Shi-ying Zhang |
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Institution: | Institute of Semiconductors, Shandong Normal University, Jinan 250014, PR China |
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Abstract: | Pine-needle-shaped GaN nanorods have been successfully synthesized on Si(111) substrates by ammoniating Ga2O3/Nb films at 950 °C in a quartz tube. The products are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and field-emission transmission electron microscope (FETEM). The results show that the pine-needle-shaped nanorods have a pure hexagonal GaN wurtzite with a diameter ranging from 100 to 200 nm and a length up to several microns. The photoluminescence spectra (PL) measured at room temperature only exhibit a strong emission peak at 368 nm. Finally, the growth mechanism of GaN nanorods is also briefly explored. |
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Keywords: | GaN nanorods Nb Ammoniating |
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