Hydrostatic pressure effects on exciton states in InAs/GaAs quantum dots |
| |
Authors: | Congxin Xia Fengchun Jiang Shuyi Wei |
| |
Institution: | 1. Department of Physics, Henan Normal University, Xinxiang, 453007, China;2. Department of Technology and Physics, Zhengzhou University of Light Industry, Zhengzhou, 450002, China |
| |
Abstract: | Based on the effective-mass approximation, the hydrostatic pressure effects on exciton states in InAs/GaAs self-assembled quantum dots (QDs) are studied by means of a variational method. Numerical results show that the exciton binding energy has a minimum with increasing dot height for any hydrostatic pressure. The interband emission energy increases when the hydrostatic pressure increases. In particular, we find that hydrostatic pressure has a remarkable effect on exciton states for small QD size. Our results are in agreement with experiment measurements. |
| |
Keywords: | Quantum dot Exciton Hydrostatic pressure |
本文献已被 ScienceDirect 等数据库收录! |
|