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Effect of the Ge mole fraction on the formation of a conduction path in cylindrical strained-silicon-on-SiGe MOSFETs |
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| Authors: | Tarun Vir Singh M Jagadesh Kumar |
| Institution: | Department of Electrical Engineering, Indian Institute of Technology, Delhi, Hauz Khas, New Delhi–110 016, India |
| Abstract: | |
| Keywords: | Strained silicon Surrounding gate MOSFET Threshold voltage Two-dimensional simulation |
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