Dislocation-induced photoluminescence in silicon crystals of various impurity composition |
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Authors: | S. A. Shevchenko A. N. Izotov |
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Affiliation: | (1) Institute of Solid-State Physics, Russian Academy of Sciences, Chernogolovka, Moscow oblast, 142432, Russia |
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Abstract: | The effect of oxygen on the dislocation-induced photoluminescence (DPL) spectra at 4.2 K is studied in silicon crystals with different impurity compositions subjected to plastic deformation at temperatures above 1000°C. A strong effect of doping impurities on the DPL spectra is observed for concentrations above 1016 cm?3. It is shown that the peculiarities of many DPL spectra in silicon can be explained by assuming that the D1 and D2 lines are associated with edge-type dislocation steps on glide dislocations. |
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