Anomalous photoluminescence and raman scattering behavior in heavily Mg+ ion-implanted InP |
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| Authors: | A Yamada Y Makita H Asakura T Iida S Kimura T Matsumori S Uekusa |
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| Institution: | (1) Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba-shi, 305 Ibaraki-ken, Japan;(2) Tokai University, 1117 Kitakaname, Hiratsuka-shi, 259-12 Kanagawa-ken, Japan;(3) Meiji University, 1-1-1 Higashi-mita, Tama-ku, 214 Kawasaki-shi, Japan |
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| Abstract: | Mg+ ions were implanted into highly pure InP grown by the liquid encapsulated Czochralski (LEC) method in which the Mg concentration Mg] was varied between 1×1015 cm–3 and 3×1020 cm–3. Two annealing methods were used: furnace annealing (FA) up to 740° C and flash lamp annealing (rapid thermal annealing, RTA) up to 900° C. For characterization, photoluminescence (PL) spectra were measured between 2K and room temperature together with Raman scattering measurements at room temperature. An emission designated by g, which was attributed to a novel energy state of an isolated acceptor, was found to be produced for a rather low value of Mg]. In addition, a broad emission denoted by g–g], which was ascribed to acceptor-acceptor pairs, was observed below bound exciton emissions for moderate values of Mg]. These features were quite similar to those previously observed in acceptor-doped GaAs when the background concentration of donors is extremely low. Two additional novel emissions located far below the band-to-acceptor emission were also obtained, and each showed a remarkable energy shift towards lower energy with increasing Mg]. The binding energies of these emissions were estimated from the temperature dependence of PL spectra and the results suggest that they are complex-type radiative recombination centers, presumably donor-acceptor-type centers. A strong broad emission centered near the band-to-acceptor emission was observed for Mg]=3×1020 cm–3. This observation indicates a formation of a new material between In, P and Mg, which was also attested by the appearance of a new TO-like Raman signal for Mg] greater than 1×1019 cm–3. A substantial difference of PL and Raman spectra was revealed for the two annealing methods, suggesting that the annealing behaviour of ion-implanted InP should be investigated more extensively in order to establish reliable annealing procedures.Dedicated to H.-J. Queisser on the occasion of his 60th birthday |
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| Keywords: | 78 55 Cr 78 30 Gt 81 20 -n |
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