A photodiode with high rectification ratio based on well-aligned ZnO nanowire arrays and regioregular poly(3-hexylthiophene-2,5-diyl) hybrid heterojunction |
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| Authors: | Zhaolin?Yuan Email author" target="_blank">Junsheng?YuEmail author Wenming?Ma Yadong?Jiang |
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| Institution: | (1) State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054, P.R. China; |
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| Abstract: | A photodiode was fabricated based on well-aligned ZnO nanowire arrays (ZNAs) and regioregular poly(3-hexylthiophene-2,5-diyl)
(P3HT) hybrid heterojunction. The current–voltage (I–V) characteristics of ITO/ZNAs/P3HT/Ag device in the dark and under illumination
with a solar simulator were investigated in detail. The results demonstrated that the device showed good diode characteristics
in the dark and under illumination. The device exhibited a high rectification ratio (RR) of 3211 at 2 V and a low turn-on
voltage of 0.5 V in the dark. Also, the RR of the device as a function of illumination intensity was observed, and the transportation
process of charge carriers in the diode under illumination was illuminated in terms of energy band diagram. |
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