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Study on nitridation processes of β-Ga2O3 single crystal |
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| Authors: | Xing Li Changtai Xia Xiaoli He Guangqing Pei Jungang Zhang Jun Xu |
| Abstract: | Nitridated /3-Ga2Os (100) substrate was investigated as the substrate for CaN epitaxial growth.The effects of nitridation temperature and surface roughness of -Ga2O3 wafers on the formation of CaN were studied. |
| Keywords: | processes nitridation Study effects temperature surface roughness formation substrate epitaxial growth |
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