Magnetoresistance dependence on electrical contact geometry and field alignment in mesoscopic rectangular rings |
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Authors: | C C Wang S Jain A O Adeyeye |
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Institution: | (1) Department of Electrical and Computer Engineering, National University of Singapore, Information Storage Materials Laboratory, 4 Engineering Drive 3, Singapore, 117576, Singapore |
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Abstract: | We investigate the magnetoresistance (MR) responses in a ferromagnetic
rectangular ring structure using a four-point probe technique. The measured
MR curves are strongly dependent on the electrical contact geometries used.
The associated MR characteristics are elucidated by a combination of
micromagnetic simulations and resistor-network based model, and the MR
contributions from different portions of the ring were studied
quantitatively. The systematic angular MR measured at the ring corner
further show that the locations of the domain wall nucleation are very
sensitive to the field alignment. |
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Keywords: | PACS" target="_blank">PACS 73 63 -b Electronic transport in nanoscale materials and structures 75 60 Jk Magnetization reversal mechanisms |
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