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External cavity diode lasers with E-beam written silicon diffraction gratings |
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| Authors: | Bohdan Mroziewicz Emil Kowalczyk Lech Dobrzanski Jacek Ratajczak Stainslaw J Lewandowski |
| Institution: | (1) Institute of Electron Technology, Al. Lotnikow 32/46, Warsaw, 02-668, Poland;(2) Institute of Electronic Materials Technology, ul.Wolczynska 133, Warsaw, 01-919, Poland;(3) Institute of Physics, Polish Acad. of Sciences, Al. Lotnikow 32/46, Warsaw, 02-668, Poland |
| Abstract: | Performance of external cavity diode lasers with silicon gratings produced by E-beam writing and subsequent reactive ion etching is described. Optical amplifiers used in the experiments were based on single quantum well heterostructures grown by molecular beam epitaxy. The lasers were set up in the Littrow configuration and have been designed to allow for wavelength tuning in the range centred at 960 nm. |
| Keywords: | E-beam writing External cavity lasers Silicon gratings |
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