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Defect profiles in graded band-gap layers of <Emphasis Type="Italic">P</Emphasis>-HgCdTe heteroepitaxial structures under ion-beam etching
Authors:A V Voitsekhovskii  V S Volkov  D V Grigor’ev  I I Izhnin  A G Korotaev  A P Kokhanenko  M Posyatsk  V G Sredin  N Kh Talipov
Institution:(1) Tomsk State University, Tomsk, Russia;(2) Peter the Great Military Academy of the Strategic Missile Force, Moscow, Russia;(3) SPE “Karat”, Lvov, Ukraine;(4) Institute of Physics of Rzeszów University, Rzeszów, Poland
Abstract:The results of investigations into spatial distribution of donors in p-HgCdTe graded band-gap layers with various composition profiles in the near-surface layer upon ion-beam etching are reported. It is found that the depth of the resulting n+-layer is weakly dependent on the conditions of ion-beam etching and composition of material of the surface and is about 0.5–1 μm. The electron density in the n+-layer on the surface is observed to increase with time of beam etching. It is shown that the conditions of ion-beam etching and the composition of the near-surface region significantly affect only the depth of the foregoing layer with low electron density. Analysis of experimental data shows that the process of ion-bean etching in p-HgCdTe heteroepitaxial structures with a composition gradient in the near-surface region is different from etching in HgCdTe homogeneous epitaxial structures and crystals. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 51–56, September, 2008.
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