Defect profiles in graded band-gap layers of <Emphasis Type="Italic">P</Emphasis>-HgCdTe heteroepitaxial structures under ion-beam etching |
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Authors: | A V Voitsekhovskii V S Volkov D V Grigor’ev I I Izhnin A G Korotaev A P Kokhanenko M Posyatsk V G Sredin N Kh Talipov |
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Institution: | (1) Tomsk State University, Tomsk, Russia;(2) Peter the Great Military Academy of the Strategic Missile Force, Moscow, Russia;(3) SPE “Karat”, Lvov, Ukraine;(4) Institute of Physics of Rzeszów University, Rzeszów, Poland |
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Abstract: | The results of investigations into spatial distribution of donors in p-HgCdTe graded band-gap layers with various composition profiles in the near-surface layer upon ion-beam etching are reported. It
is found that the depth of the resulting n+-layer is weakly dependent on the conditions of ion-beam etching and composition of material of the surface and is about 0.5–1
μm. The electron density in the n+-layer on the surface is observed to increase with time of beam etching. It is shown that the conditions of ion-beam etching
and the composition of the near-surface region significantly affect only the depth of the foregoing layer with low electron
density. Analysis of experimental data shows that the process of ion-bean etching in p-HgCdTe heteroepitaxial structures with a composition gradient in the near-surface region is different from etching in HgCdTe homogeneous epitaxial structures and crystals.
Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 51–56, September, 2008. |
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